| PART |
Description |
Maker |
| NPSS35 |
Improved glass passivation for high reliability
|
Naina Semiconductor ltd.
|
| BCR1AM-12 |
LOW POWER USE GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR04AM CR04 |
LOW POWER USE GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HER107G HER103G HER101G |
High Efficiency Rectifier Glass Passivation Junction
|
Weitron Technology
|
| CR03AM |
LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
| CR6CM |
MEDIUM POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR3CM |
Low Power Use Non-Insulated Type / Glass Passivation Type
|
Mitsubishi Electric
|
| CR2AM |
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR16HM |
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
| CR6PM-12 CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
